Source for selectively providing positively or negatively charged particles for a focusing column

ABSTRACT

A single column charged particle source with user selectable configurations operates in ion-mode for FIB operations or electron mode for SEM operations. Equipped with an x-ray detector, energy dispersive x-ray spectroscopy analysis is possible. A user can selectively configure the source to prepare a sample in the ion-mode or FIB mode then essentially flip a switch selecting electron-mode or SEM mode and analyze the sample using EDS or other types of analysis.

This application is a Continuation application of U.S. application Ser.No. 14/271,298, filed May 6, 2014, which is a Continuation applicationof U.S. application Ser. No. 13/306,032, filed Nov. 29, 2011, which arehereby incorporated by reference.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to charged particle beam systems and, inparticular, to the use of an inductively coupled plasma source toprovide electrons or ions to process and analyze a sample.

BACKGROUND OF THE INVENTION

Focused charged particle beam systems, such as ion and electron beamsystems, are used to image, analyze, and modify samples on a microscopicor nanoscopic scale. An electron beam, for example, can be used in ascanning electron microscope (SEM) to form images of a sample by thedetection of secondary electrons and for elemental analysis by measuringan x-ray spectrum. A focused ion beam (FIB) system, for example, can beused in a variety of applications in nanotechnology and integratedcircuit manufacturing to create and alter microscopic and nanoscopicstructures. FIB systems can be used, for example, to image, mill,deposit, and analyze with great precision. Milling or micromachininginvolves the removal of bulk material at or near the surface of asample. Milling can be performed without an etch-assisting gas, in aprocess called sputtering, or using an etch-assisting gas, in a processreferred to as chemically-assisted ion beam etching. U.S. Pat. No.5,188,705, which is assigned to the assignee of the present invention,describes a chemically-assisted ion beam etching process. Inchemically-assisted ion beam etching, an etch-enhancing gas reacts inthe presence of the ion beam to combine with the surface material toform volatile compounds. In FIB deposition, a precursor gas, such as anorganometallic compound, decomposes in the presence of the ion beam todeposit material onto the target surface.

The charged particles can be produced from a variety of sources. A“bright” source is desirable because it can produce more chargedparticles into a smaller spot. The “brightness” of a charged particlebeam source is related to the number of charged particles emitted perarea and the solid angle into which the particles are emitted. The areafrom which the particles appear to be emitted is referred to as the“virtual source.” High brightness sources typically have small virtualsource sizes and can be focused onto smaller spots, which provides forhigher resolution processing.

A liquid metal ion source (LMIS) is very bright and can provide highresolution processing, but is limited to a low beam current at highresolution. A typical system using a gallium LMIS can provide five toseven nanometers of lateral resolution. Such systems are widely used inthe characterization and treatment of materials on microscopic tonanoscopic scales. A gallium LMIS comprises a pointed needle coated witha layer of gallium. An electric field is applied to the liquid galliumto extract ions from the source. To produce a very narrow beam for highresolution processing, the current in a beam from an LMIS must be keptrelatively low, which means low etch rates and longer processing times.As the beam current is increased beyond a certain point, the resolutionrapidly degrades.

Plasma ion sources ionize gas in a plasma chamber and extract ions toform a beam that is focused on a work piece. Plasma ion sources havelarger virtual source sizes than LMISs and are much less bright. An ionbeam from a plasma source, therefore, cannot be focused to as small of aspot as the beam from an LMIS, although a plasma source can producesignificantly more current. Plasma sources, such as a duoplasmatronsource described by Coath and Long, “A High-Brightness Duoplasmatron IonSource Microprobe Secondary Ion Mass Spectroscopy,” Rev. Sci.Instruments 66(2), p. 1018 (1995), have been used as ion sources for ionbeam systems, particularly for applications in mass spectroscopy and ionimplantation. Inductively coupled plasma (ICP) sources have been usedmore recently with a focusing column to form a focused beam of chargedparticles, i.e., ions or electrons.

An inductively coupled plasma source is capable of providing chargedparticles within a narrow energy range, which allows the particles to befocused to a smaller spot than ions from a duoplasmatron source. ICPsources, such as the one described in U.S. Pat. No. 7,241,361, which isassigned to the assignee of the present invention, include a radiofrequency (RF) antenna typically wrapped around a ceramic plasmachamber. The RF antenna provides energy to maintain the gas in anionized state within the chamber. Because the virtual source size of aplasma source is much larger than the virtual source size of an LMIS,the plasma source is much less bright.

Electron beams are used in a scanning electron microscope (SEM) to formimages of a work piece. The electrons are typically provided by atungsten or lanthanum hexaboride thermionic emitter or a field emissiongun, such as a Schottky emitter or a cold cathode emitter. Such emittersprovide a small virtual source and can be focused to a very small spot.A typical electron emitter used in an SEM may have a reduced brightnessof between about 2×10⁷ A/m²·sr·V and 8.2×10⁷ A/m²·sr·V. Electrons can befocused to a smaller spot than ions and cause less damage to the sample.

An electron beam focusing column is significantly different from an ionbeam focusing column. For example, electron beam columns typically usesmagnetic focusing lenses because of their lower aberration, whereas ionbeam columns typically use electrostatic focusing lenses because anexcessively large current would be required to focus the heavy ionsusing a magnetic lens.

An SEM can be used not only to form an image of a work piece, but alsoto analyze the processed area for chemical or elemental composition.Energy dispersive spectroscopy (EDS) systems are commonly found on SEMsand are useful in performing localized chemical analysis of a sample.EDS systems utilize the x-ray spectrum emitted by a material impacted byhigh-energy electrons from the focused beam of electrons of the SEMimaging operation. When an electron impacts the sample, the electronloses energy by a variety of mechanisms. One energy loss mechanismincludes transferring the electron energy to an inner shell electron,which can be ejected from the atom as a result. An outer shell electronwill then fall into the inner shell, and a characteristic x-ray may beemitted. The energy of the characteristic x-ray is determined by thedifference in energies between the inner shell and the outer shell.Because the energies of the shells are characteristic of the element,the energy of the x-ray is also characteristic of the material fromwhich it is emitted. When the number of x-rays at different energies isplotted on a graph, one obtains a characteristic spectrum, such as thespectrum of pyrite shown in FIG. 1. The peaks are named for thecorresponding original and final shell of the electron that originatedthe x-ray. FIG. 1 shows the sulfur Kα peak, the iron Kα peak and theiron Kβ peaks.

It is often useful to prepare a sample using a FIB and then use an SEMto image or to perform an EDS analysis. If two separate instruments areused, the user is faced with a lengthy process of removing the samplefrom the FIB system and then setting up the sample in the EDS capablesystem which can take upwards of 30 minutes or more. This makes for anunacceptably long time for many applications to be able to analyze aprepared sample.

A known solution to reduce this overhead is a dual-beam systemconsisting of a FIB column and SEM column on the same platform. Eachcolumn is optimized for the type of particle beam that it produces. Adual column system is costly because of the two separate focusingcolumns. The SEM of a dual beam system, such as the Quanta 3D systemfrom FEI Company, the assignee of the present invention, typically hasan imaging resolution of better than five nanometers.

While it is known that a plasma chamber can be used as a source ofelectrons as well as ions, plasma sources are not typically used for anSEM because the large virtual source size makes for poor resolutioncompared to other sources. Moreover, when electrons are extracted from aplasma source, negative ions are also extracted. Lastly, because thedifference in the configuration of the optical columns for focusingelectron and focusing ions, using the same column for both ions andelectrons would result in less than optimum resolution for ions,electrons, or both.

SUMMARY OF THE INVENTION

An object of the invention is to provide a method and apparatus forelectron dispersive x-ray spectroscopy analysis of a FIB prepared sampleusing a single optical column having inductively coupled plasma source.

In a preferred embodiment, a single column inductively coupled plasmasource system is outfitted with a power supply and configuration schemecapable of operating in at least two user selectable modes, ion-mode forFIB processing and electron-mode for SEM analysis. An attached x-raydetector, spectrometer or other spectrum analyzing system is used tocollect the information necessary to determine the physical propertiesof the sample.

The foregoing has outlined rather broadly the features and technicaladvantages of the present invention in order that the detaileddescription of the invention that follows may be better understood.Additional features and advantages of the invention will be describedhereinafter. It should be appreciated by those skilled in the art thatthe conception and specific embodiments disclosed may be readilyutilized as a basis for modifying or designing other structures forcarrying out the same purposes of the present invention. It should alsobe realized by those skilled in the art that such equivalentconstructions do not depart from the spirit and scope of the inventionas set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more thorough understanding of the present invention, andadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows an example x-ray spectrum of pyrite, which includes ironand sulfur.

FIG. 2 shows a cross-sectional schematic view of an embodiment of theinvention including a portion of an inductively-coupled plasma sourcewith EDS capability.

FIG. 3 shows a method of one embodiment of the invention in which asample is prepared in FIB mode then analyzed in SEM mode with EDS.

FIG. 4 shows a flowchart of an application using a system like the onein FIG. 2.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

While it is known that the resolution of an electron beam from a plasmaelectron source is poorer than the resolution of an electron beam from athermionic or field emission source, applicants have recognized thatbeam resolution is not the limiting factor in many applications, such asEDS. In scanning electron microscopy, secondary electrons used to formthe image come from a relatively small interaction volume around theimpact point of the primary beam. As the beam electrons penetratebeneath the sample surface, they are scattered randomly away from thebeam's point of impact. Only secondary electrons generated near the topsurface are capable of escaping and being detected, and those secondaryelectron typically come from close to the point of impact of the primarybeam. X-rays, on the other hand, can escape from a much greater depthand so detectable x-rays continue to be generated as the electron movesdownwards and is scattered sideways. Thus, the “interaction volume,”that is, the region from which signal is detected, is much larger forx-rays, typically about a cubic micron, than for secondary electrons.For x-rays, the interaction volume, not the beam spot size, becomes thecritical factor in resolution. Thus, applicants have found that using arelatively low brightness plasma electron source can provide adequateresolution for EDS, particularly in applications, such as naturalresources, in which the sample is relatively uniform over a scale ofhundreds of nanometers.

A preferred embodiment of the invention uses an ICP source equipped witha high voltage bipolar power supply which is capable of selectable modesof operation and sourcing the appropriate voltages for each mode,enabling the generation of a beam of ions or electrons. The term“bipolar power supply” as used herein refers to a power supply capableof switching or reversing polarities of the supplied voltages. “Powersupply,” as used herein, means any source of one or more voltages orcurrents and is not limited to any specific type, form or composition.In an ion mode, the source operates at a high positive potential withrespect to ground, and the extractor operates at a high negative voltagewith respect to the source voltage. In electron mode, the sourceoperates at a high negative potential with respect to ground and theextractor operates at high positive potential with respect to the sourcevoltage. It is understood that the different properties of ion andelectrons, with the electrons being several orders of magnitude lighterthan the ions, requires different operating parameters in the plasmasource and in the optical elements in the focusing column. The settingwill vary with the type of ion and the application. Based on theguidance provided herein, optimum column settings for a specificapplication can be readily determined through simulation and routineexperimentation. An attached x-ray detector, spectrometer or otherspectrum analyzer is used to collect the information necessary todetermine the physical properties of the sample.

FIG. 2 is a schematic diagram of a charged particle beam system 200 ofthe present invention. An RF power supply 222 supplies RF power to amatch box 220 which is connected to an antenna 204 which surrounds asource tube 254 within which a plasma is generated. A split Faradayshield (not shown) is preferably positioned between the antenna 204 andthe interior of the plasma tube 254 to reduce capacitive coupling,thereby reducing the energy spread of the extracted charged particles,reducing chromatic aberration and allowing the particles to be focusedto a smaller spot. RF power supply 222 could also apply power to theantenna in a “balanced” manner, as described in U.S. Pat. No. 7,241,361,to further reduce energy spread of the particles in the extracted beam.A feed gas to be ionized is fed into the source tube 254 through a feedsystem 202. A biasing power supply 230 is connected to a source biasingelectrode 206. The source biasing electrode can be biased to a largenegative voltage when an electron beam or beam of negative ions is to begenerated or to a high positive voltage when a beam of positive ions isto be generated. For example, the plasma is typically biased to aboutpositive 30 kV when ions are extract for ion beam milling; the plasma istypically biased to between about negative 20 kV and negative 30 kV whenelectrons extract for EDS analysis, and the plasma is typically biasedto between about negative 1 kV and negative 10 kV when electrons extractfor forming a scanning electron beam image. Use of an ICP with a splitfaraday shield and a balanced antenna facilitates the production of ahigher resolution beam which is suitable for some application in which alarge spot size would not be adequate.

An extractor electrode 208 in the optical column is biased by a powersupply 234, referenced to the output voltage of the biasing power supply230. The power supply 234 is preferably a bipolar power supply so thatit can supply either a positive or negative bias to the extractorelectrode. When electrons or negative ions are being extracted, avoltage positive to the source biasing electron is used; when positiveions are being extracted, a voltage negative to the source biasingelectron is used. Thus, source biasing electron 208 is preferably abipolar power supply, capable of applying a positive or negativevoltage. A condenser electrode 210 in the column is biased by a powersupply 232, also referenced to the output voltage of the biasing powersupply 230. Condenser electrode power supply 232 is preferably bipolarand can bias condenser electrode 210 to a positive or negative biasdepending on the charged of particles extracted from the plasma source.

Ions or electrons are extracted from the plasma contained in the sourcetube 254 due to the high electric field induced at the lower end of thesource tube 254 by the bias voltage on the extractor electrode 208relative to the voltage on the source biasing electrode 206. The ions orelectrons extracted from the source tube 254 emerge downwards throughthe opening in the source biasing electrode 206, forming a chargedparticle beam which enters the optical column. A mass filter 290,typically comprising a deflection in the beam path or a chicane, is usedto separate electrons from negative ions that are simultaneouslyextracted. The mass filter 290 is controlled by the mass filter actuator292. The particles could be deflected, for example, by a magneticdeflection element such as a dipole or a quadrupole or by an E×B massfilter.

Thus, the plasma at the lower end of the source tube 254 serves as a“virtual source” of ions or electrons for the charged particle beamcolumn. In general, a large portion of the charged particle beam goingdown the optical column strikes one or more apertures in the column,such as apertures 216, 256, or 214, preferably composed of a materialthat is resistant to erosion by the ion beam. In the FIB column of FIG.2, three apertures are shown: 1) an aperture 216 in the source biasingelectrode 206, 2) a beam acceptance aperture (BAA) 256, and 3) a beamdefining aperture (BDA) 214.

The position of the beam acceptance aperture 256 is controlled by thebeam acceptance aperture actuator 236. The position and choice of beamdefining aperture 214 is controlled by the beam defining apertureactuator 238. Two lenses 212 and 242, preferably electrostatic einzellenses, are shown forming a focused beam 260 on the surface of a sample240 supported and moved by a sample stage 244 within a vacuum enclosure246. Lenses 212 and 242 are preferably bipolar lenses so that they canact as accelerating lens or decelerating lenses for positively chargedor negatively charged particles. Lens 212 has a power supply 250, whilelens 242 has a power supply 252.

A pair of deflectors 270 position and move the beam across the workpiece surface. Deflectors 270 are controlled by a deflector control 258.A pair of x-ray detectors 280, such as solid state silicon driftdetectors or Si(Li) detectors collect x-rays to form a spectrum of thework piece. A secondary electron detector 282 collects secondaryelectrons for forming an image by scanning electron microscopy orscanning ion beam imaging. System 200 optionally includes othercomponents, such as a gas injector for charged particle beam assistedetching and deposition. A controller 284 controls the operation ofsystem 200, and can switch the voltages on the source biasing electrode,on the extractor electrode, and optionally on other components in thesystem to switch between directing an electron beam toward the workpiece or directing an ion beam toward the work piece.

Embodiments of the invention provide a high current, medium resolutionelectron beam, which is particularly suited, though not limited, to EDSapplications Skilled persons will understand that the operatingparameters of the plasma source and the focusing column are typicallyoptimized for the type of particles extracted from the plasma source.Table I shows typical operating parameters for operating with xenonions, positive oxygen ions, and electrons. Skilled persons understandthat an einzel lens can be operated as an “acceleration lens” or a“deceleration lens,” depending on the voltage on the lens. In someembodiments, it is preferable to operate the first and second lenses asa accelerating lenses when focusing low energy charged particles and asa decelerating lens when focusing high energy charged particles.

Operating parameter Xenon ions Oxygen ions Electrons Gas pressure inplasma .001 mbar to 1.2 mbar .001 mbar to 1.2 mbar .001 mbar to 1.2 mbarchamber Plasma bias voltage +1 kV to +30 kV +1 kV to +30 kV −1 kV to −30kV Extractor electrode voltage −2 kV to −15 kV −2 kV to −15 kV +2 kV to+15 kV (relative to beam voltage) Deflection voltage range −150 V to+150 V −150 V to +150 V −150 V to +150 V First lens voltage 0 V to +30kV 0 V to +30 kV −30 kV to 0 V Second lens voltage −15 V to +30 kV −15 Vto +30 kV −30 kV to +15 V RF Power 25 W to 1000 W 25 W to 1000 W 25 W to1000 W Gas pressure in specimen 5 × 10⁻⁷ mbar to 1 × 5 × 10⁻⁷ mbar to 5× 10⁻⁷ mbar to chamber 10⁻⁷ mbar 1 × 10⁷ mbar 1 × 10⁻⁷ mbar

Fixed design parameters of the column, such as the position and designof the lenses, is typically optimized for ion beams, although the columndesign can be optimized for an electron beam or can be a compromisebetween optimizing for ions and electrons. The electron beam isestimated to have a spot size of less than 80 nm at a beam current of 50pA, less than 200 nm at a beam current of about 1 nA, less than 1 μm ata beam current of 100 nA, and less than 2.3 μm at a beam current of 1μA. While the spot size is not as small at low beam currents as aconvention electron source, considering the interaction volume of onemicrometer square for the production of x-rays, the spot size isadequately small for useful EDS analysis, particularly for analyzingsample regions, such as crystal grains, that are typically larger thanthose spot sizes.

The brightness of the ICP as an electron source is typically about 6×10⁴A/m²·sr·V.

FIG. 3 is a flow chart showing a method of one embodiment of theinvention in which a sample is prepared in FIB mode then analyzed in SEMmode with EDS. In step 302, the user selects the desired operating modeof the ICP system, ion-mode or electron-mode. For example, if ion-modeis selected, step 304 would follow. In step 304, the appropriate powersupplies, gas, and system parameters are setup for FIB operations withthe beam voltage source configured with a high positive voltage withrespect to ground applied to the source electrode and a high negativevoltage with respect to the beam voltage applied to the extractorelectrode. With the ion source gas provided and the plasma ignited, anion beam is generated. Voltages are applied to the focusing lens forfocusing the ions. In step 306, the ion beam is directed to the samplefor processing. In step 308, the sample is processed by FIB operationswhich include, for example, imaging, milling, depositing, and analyzingwith great precision.

Once the sample is FIB processed or prepared, the user may want tofollow-up with SEM imaging and an EDS analysis. In such case, the usersimply switches the ICP operating mode to the electron-mode in step 302.In step 310, the appropriate power supplies, gas, and system parametersare then setup for SEM operations with the beam voltage sourceconfigured with a high negative voltage with respect to ground appliedto the source electrode and a high positive voltage with respect to thebeam voltage applied to the extractor electrode. With the electronsource gas provided and the plasma ignited, an electron beam isgenerated. In step 312, the electron beam is directed to the sample. Instep 314, x-rays are emitted from the surface in response to the impactof the electrons upon the sample and are detected and the energymeasured by an energy dispersive x-ray detector. If it is determined instep 316 that not all points in the sample have been scanned, then theelectron beam is moved to the next dwell point in step 318, andadditional x-rays are collected at that point. The scan continues untilthe desired portion of the sample surface is completed, with x-raysbeing collected at each point. After the scan is complete, the x-rayscollected while the beam was positioned at each of the scan points areanalyzed in step 320, determining which materials are present.

FIG. 4 shows an application of a system like the one in FIG. 2. In step402, a mineral sample is prepared from in an epoxy matrix by knownmethods. Such samples typically have a 30 mm diameter. In step 404, thesample block is placed in the sample chamber of the charged particlebeam system having an ICP charged particle source. In step 406, thesample chamber is evacuated. In step 408, the operating parameters ofthe plasma source and focusing column are set for an ion beam, such as abeam of xenon ions. In step 410, xenon ions are extracted from theplasma source and directed in a beam toward the sample to remove a smallamount of material, such as approximately between 0.1 and 5 microns,from the top surface, depending upon the sample porosity, naturallyoccurring oxide/nitride thickness, and the grinding method. BecauseXenon ions are relatively heavy, they can remove material more rapidlythan lighter ions and are less likely to penetrate and remain in thesample. After the top surface of the sample is removed, the operatingparameters of the system are adjusted in step 412 for use with anelectron beam. In step 414, the electron beam is scanned across thesample, with x-rays are collected at points on the sample. In step 416,the spectrum collected is analyzed to determine a map of the compositionof different points on the sample. Removing a material such as a surfacelayer with the ion beam and then analyzing the exposed material ispreferably performed in the same vacuum chamber without exposing thework piece to atmosphere. This provides a clean surface for analysis andprevents the formation of oxides, nitrides, or other compounds thatcould alter the analysis.

In integrated circuit analysis, the ion beam from the plasma source canbe used to remove material more rapidly than a LMIS because of the muchlarger beam current. This is particularly useful in failure analysis ofpackaged “flip chip” integrated circuits, whose circuitry is exposedfrom the back side by the ion beam, requiring a great deal of materialto be removed. The electron beam can them be used to obtain an image andperform a spectroscopic examination of an exposed defect.

Some embodiments of the invention provide a single charged particle beamcolumn that is switchable between producing an electron beam andproducing an ion beam from a single plasma source. Some embodiments ofthe invention use the plasma source as a source of electrons for variousoperations and analytical techniques. While the embodiments describeduse the electron beam for EDS analysis, the invention is not limited toany specific use of the electron beam. For example, the electron beamcould be used for electron beam induced deposition or etching with asuitable precursor gas. The electron beam could be used for AugerElectron Spectroscopy, X-ray photoelectron spectroscopy, or wavelengthdispersive x-ray spectroscopy. While the embodiments described aboveuses an ICP electron source, the invention is not limited to anyparticular type of plasma electron source and other types of plasmasources, such as a duoplasmatron plasma source, may be useable in someembodiments.

In accordance with one aspect of some embodiments of the invention, acharged particle beam system comprises a plasma chamber for maintaininga plasma; a biasing electrode for biasing the plasma to an operatingvoltage; a power source capable of providing a positive or negativevoltage to the biasing electrode, wherein the power source is capable ofswitching polarity to selectively extract positively or negativelycharged particles from the plasma chamber; an extractor electrode forextracting charged particles from the plasma source; an extractorelectrode power source capable of providing a positive or negativevoltage to the extractor electrode; and a focusing column for focusingthe charged particles extracted from the plasma source onto a workpiece, wherein the focusing column focuses the positive or negativelycharged particles onto the work piece.

In accordance with another aspect of some embodiments of the invention,the charged particle beam system further comprises an x-ray detector fordetecting x-rays generated by the impact of electrons extracted from theplasma chamber and focused onto the work piece by the focusing column.

In accordance with another aspect of some embodiments of the inventionthe plasma chamber is part of an inductively coupled plasma source.

In accordance with another aspect of some embodiments of the invention,an apparatus for processing and determining properties of a samplecomprises an inductively coupled plasma source which selectivelyoperates in a first mode as an ion source and a second mode as anelectron source; a power supply configured to selectively provide afirst voltage configuration corresponding to the first mode, allowingfocused ion beam operations and at least a second voltage configurationcorresponding to at least a second mode, allowing SEM operations; and anx-ray detector to collect information necessary to determine a propertyof a sample.

In accordance with another aspect of some embodiments of the invention,the detector is an energy dispersive x-ray detector.

In accordance with another aspect of some embodiments of the invention,the energy dispersive x-ray detector is of the silicon drift detectortype.

In accordance with another aspect of some embodiments of the invention,the property of a sample comprises chemical or elemental composition ofthe sample.

In accordance with another aspect of some embodiments of the invention,the first voltage configuration is comprised of a high positive voltagewith respect to ground applied to a source electrode and a high negativevoltage with respect to the source electrode voltage applied to anextractor electrode; and the second voltage configuration is comprisedof a high negative voltage with respect to ground applied to the sourceelectrode and a high positive voltage with respect to the sourceelectrode voltage applied to the extractor electrode.

In accordance with another aspect of some embodiments of the invention,a method for processing a sample, comprises providing a single columninductively coupled plasma source having user selectable modes ofoperation such that an ion beam is generated in a first mode and anelectron beam is generated in at least a second mode; selecting a modeof operation of the inductively coupled plasma source; directing thegenerated beam toward a sample; and processing the sample with thegenerated beam.

In accordance with another aspect of some embodiments of the inventiondirecting the generated beam toward a sample comprises directing a beamhaving a spot size of less than 200 nm toward the sample.

In accordance with another aspect of some embodiments of the invention,directing the generated beam toward a sample comprises directing the ionbeam toward the sample in the first mode and directing the electron beamtoward the sample in the second mode.

In accordance with another aspect of some embodiments of the invention,processing the sample with the generated beam comprises processing thesample with the ion beam to perform a focused ion beam operation andscanning the sample with the electron beam while collecting emittedx-rays to determining properties of the sample.

In accordance with another aspect of some embodiments of the invention,processing the sample with the ion beam to perform a focused ion beamoperation includes exposing material for analysis by the electron beam.

In accordance with another aspect of some embodiments of the invention,exposing material for analysis by the electron beam includes removing alayer of material from the sample surface.

In accordance with another aspect of some embodiments of the invention,a method of processing a sample comprises inductively coupling radiofrequency energy from an antenna into a plasma chamber through a splitFaraday shield to provide a plasma in the plasma chamber; extractingelectrons from the plasma in the plasma chamber; and forming theelectrons into a focused beam and directing the beam toward the sample.

In accordance with another aspect of some embodiments of the invention,the focused beam of electrons has a spot size at the sample of less than200 nm with an electron current of 1 nA or greater.

In accordance with another aspect of some embodiments of the invention,the focused beam of electrons has a spot size at the sample of less than2.3 μm with an electron current of 1 μA or greater.

In accordance with another aspect of some embodiments of the invention,the method further includes detecting emissions from the points impactedby electrons during a scan; and determining properties of the samplefrom the emissions collected.

In accordance with another aspect of some embodiments of the invention,the emissions are x-rays.

In accordance with another aspect of some embodiments of the invention,the emissions are secondary electrons or backscattered electrons.

In accordance with another aspect of some embodiments of the invention,the method further comprises extracting ions from the plasma chamber;and forming the ions into a focused beam and directing the beam towardthe sample.

In accordance with another aspect of some embodiments of the invention,forming the ions into a focused beam and directing the beam toward thesample includes removing material from the sample surface to exposeunderlying material; and forming the electrons into a focused beam anddirecting the beam toward the sample includes directing the beam towardthe exposed underlying material, without removing the sample from thevacuum chamber.

In accordance with another aspect of some embodiments of the invention,extracting ions from the plasma chamber includes extracting argon,xenon, or oxygen ions.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, compositionof matter, means, methods and steps described in the specification. Asone of ordinary skill in the art will readily appreciate from thedisclosure of the present invention, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the present invention.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps.

I claim:
 1. A method for processing a sample, comprising: providing asingle focusing column with a charged particle source both having userselectable modes of operation such that a positively charged particlebeam is generated in a first mode and a negatively charged particle beamis generated in at least a second mode; placing the sample in a vacuumchamber; receiving a selection for a mode of operation of the chargedparticle source, and in response configuring the source and the singlefocusing column to the first mode; directing the generated beam towardthe sample through the single focusing column; and processing the samplewith the generated beam; receiving a selection for reconfiguring themode of operation, and in response reconfiguring the source and thesingle focusing column to the second mode; and after reconfiguring,directing the generated beam toward a sample through the single focusingcolumn and processing the sample with the generated beam.
 2. The methodof claim 1 in which in which directing the beam of positively chargedparticles through the focusing column further includes extracting ionsfrom a plasma chamber, forming the ions into a focused beam, anddirecting the focused beam toward the workpiece.
 3. The method of claim2 further comprising creating plasma in the plasma chamber by directingenergy into the plasma chamber from outside the plasma chamber.
 4. Themethod of claim 2 in which: directing the ion beam toward the sample inthe first mode includes focusing the beam toward the sample to removematerial from the sample surface to expose underlying material; and andin which selecting the second mode of operation and directing thegenerated beam of positively charged particles toward sample furthercomprising scanning focused electrons on the exposed underlyingmaterial, without removing the sample from the vacuum chamber.
 5. Themethod of claim 1 in which processing the sample with the generated beamin the first mode further comprises processing the sample with an ionbeam to perform a focused ion beam operation.
 6. The method of claim 1in which processing the sample with the generated beam in the secondmode further comprises scanning the sample with an electron beam whilecollecting emitted x-rays to determining properties of the sample. 7.The method of claim 1 in which processing the sample with the beam toperform a focused ion beam operation includes exposing material foranalysis by the negatively charged particle beam.
 8. The method of claim1 in which the negatively charged particle beam is an electron beam, andfurther comprising: detecting emissions from the points impacted byelectrons during a scan; and determining properties of the sample fromthe emissions collected.
 9. The method of claim 8 in which the emissionsare x-rays.
 10. The method of claim 8 in which the emissions aresecondary electrons or backscattered electrons.
 11. A method forprocessing a workpiece, comprising: placing a workpiece in a vacuumchamber; selecting a first mode of operation and, in response,configuring a focusing column in a first mode adapted for use withpositively charged particles, and configuring a charged particle sourcein a first mode adapted to provide positively charged particles;directing a beam of positively charged particles through the focusingcolumn toward the workpiece in the vacuum chamber; focusing and movingthe beam of positively charged particles with the focusing column tomill material from the workpiece; after milling, selecting a second modeof operation and, in response, reconfiguring the focusing column in asecond mode adapted for use with negatively charged particles, andreconfiguring the charged particle source in a second mode adapted toprovide negatively charged particles; after reconfiguring to the secondmode, directing a beam of negatively charged particles through thefocusing column toward the workpiece in the vacuum chamber; and focusingthe beam of negatively charged particles on the workpiece with thefocusing column to image the workpiece.
 12. The method of claim 11 inwhich in which directing the beam of positively charged particlesthrough the focusing column further includes extracting ions from aplasma chamber, and forming the ions into a focused beam and directingthe beam toward the workpiece.
 13. The method of claim 12 furthercomprising creating plasma in the plasma chamber by directing energyinto the plasma chamber from outside the plasma chamber.
 14. The methodof claim 11 in which directing the beam of negatively charged particlesthrough the focusing column includes directing an electron beam.
 15. Themethod of claim 14 further comprising: in the second mode, scanning theelectron beam over the workpiece and detecting emissions from the pointsimpacted by electrons during the scan; and determining properties of theworkpiece from the emissions collected.
 16. The method of claim 15 inwhich the emissions are x-rays.
 17. The method of claim 15 in which theemissions are secondary electrons or backscattered electrons.
 18. Themethod of claim 11 in which reconfiguring the focusing column to asecond mode includes adjusting a lens voltage from a voltage configuredfor directing positively charged particles to a voltage configured fordirecting negatively charged particles.
 19. The method of claim 11 inwhich configuring a charged particle source in the first mode includessetting a plasma bias voltage.